US 11,914,892 B2
Storage device adjusting history read level storage areas based on reliabilities of memory blocks, storage controller, and operating method of storage controller
Kwangwoo Lee, Seoul (KR); Sangjin Yoo, Bucheon-si (KR); Yeonji Kim, Seoul (KR); Jeongkeun Park, Suwon-si (KR); and Jeongwoo Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 11, 2022, as Appl. No. 17/742,030.
Claims priority of application No. 10-2021-0115702 (KR), filed on Aug. 31, 2021.
Prior Publication US 2023/0066982 A1, Mar. 2, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0656 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
a non-volatile memory including a plurality of memory blocks; and
a storage controller comprising a history buffer including a plurality of history read level storage areas corresponding to the plurality of memory blocks, the storage controller being configured to dynamically adjust a number of the plurality of history read level storage areas allocated to at least one of the plurality of memory blocks based on reliabilities of the plurality of memory blocks during runtime of the storage device,
wherein the storage controller is configured to increase a number of history read level storage areas allocated to a first memory block among the plurality of memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the plurality of memory blocks.