US 11,914,300 B2
Manufacturing method of semiconductor chip, and kit
Tetsuya Kamimura, Haibara-gun (JP)
Assigned to FUJIFILM Corporation, Tokyo (JP)
Filed by FUJIFILM Corporation, Tokyo (JP)
Filed on Jan. 28, 2021, as Appl. No. 17/161,058.
Application 17/161,058 is a division of application No. 16/370,279, filed on Mar. 29, 2019, granted, now 10,942,455.
Application 16/370,279 is a continuation of application No. PCT/JP2017/035438, filed on Sep. 29, 2017.
Claims priority of application No. 2016-193257 (JP), filed on Sep. 30, 2016.
Prior Publication US 2021/0157241 A1, May 27, 2021
Int. Cl. G03F 7/32 (2006.01); B24B 37/00 (2012.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/32 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)
CPC G03F 7/327 (2013.01) [B24B 37/00 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/0752 (2013.01); G03F 7/0758 (2013.01); G03F 7/16 (2013.01); G03F 7/167 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); H01L 21/027 (2013.01); H01L 21/0274 (2013.01); H01L 21/28 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32 (2013.01); H01L 21/3205 (2013.01); H01L 21/321 (2013.01); H01L 21/3212 (2013.01); H01L 21/768 (2013.01); H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A kit comprising:
two or more selected from the group consisting of a pre-wet liquid, a developer, a rinse liquid, a polishing liquid, and a composition for forming a resist film,
wherein all of the pre-wet liquid, the developer, the rinse liquid, the polishing liquid, or the composition for forming a resist film includes a chemical liquid X which include an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom and in which the total content of the metal atom is 0.001 to 100 mass ppt.