| CPC C23F 1/02 (2013.01) [C23F 1/36 (2013.01); C23F 17/00 (2013.01)] | 1 Claim |
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1. A pattern forming method comprising:
buffing, to a gloss, the surface of an aluminum-containing product, with a wet buffing method;
degreasing the buffed surface;
performing ultrasonic cleaning of the degreased surface;
drying the ultrasonic-cleaned surface;
masking at least a part of the dried surface with an etching resist based on a silk screen printing method;
etching a part of the buffed surface not masked by using an alkaline solution during a predetermined time within 5 minutes to 9 minutes;
forming a high gloss part corresponding to a part of the buffed surface masked, and a matted part corresponding to a part of the buffed surface not masked on the surface, by removing the etching resist from the surface; and
anodizing the surface from which the etching resist is removed,
wherein the part of the buffed surface not masked is etched to a depth of 30 μm or more, and
wherein the predetermined time is varied based on a width of a masked part or the depth to obtain by etching, and
wherein the buffing comprises buffing the surface of the product by using a first paper with a first roughness, and buffing the surface of the product by using a second paper with a second roughness that is lower than the first roughness, and buffing the surface of the product by using a third paper with a third roughness that is lower than the second roughness, and
wherein the removing comprises peeling the etching resist off by performing ultrasonic immersion of the product masked with the etching resist using at least one of toluene, trichloroethane, and a ketone, and
wherein the anodizing comprises performing, in sequence, degreasing, etching, desmutting by immersing the product in desmutting dedicated solution containing a nitric acid, or permanganic acid, passing a current through the product containing aluminum, coloring, sealing, and drying by removing moisture from the surface with air having a temperature of 90° C. or lower.
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