CPC C23C 16/45536 (2013.01) [C23C 16/4408 (2013.01); C23C 16/45519 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); H01L 21/0228 (2013.01)] | 20 Claims |
1. A method for processing a substrate, wherein the substrate is located below a showerhead in a processing chamber, comprising:
depositing a deposition layer on the substrate below the showerhead in the processing chamber, wherein at least one deposition gas is provided through the showerhead;
flowing a secondary purge gas during the depositing the deposition layer from a location outside of the showerhead in the processing chamber forming a flow curtain around an outer edge of the showerhead, wherein the secondary purge gas comprises at least one component gas;
changing a partial pressure of the at least one component gas over time during the depositing the deposition layer, wherein the depositing the deposition layer has a non-uniformity, wherein the changing the partial pressure changes the non-uniformity over time during the depositing the deposition layer; and
providing a non-uniform etch back process below the showerhead in the processing chamber, wherein the non-uniform etch back process is complementary to the non-uniformity of the depositing the deposition layer, wherein the deposition layer after the non-uniform etch back process is more uniform than the deposition layer before the non-uniform etch back process.
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