US RE49,831 E1
3D semiconductor memory device
Ki Hong Lee, Suwon-si (KR); Seung Ho Pyi, Seongnam-si (KR); and Seok Min Jeon, Yeoju-gun Gyeonggi-do (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 5, 2021, as Appl. No. 17/222,697.
Application 14/474,383 is a division of application No. 13/601,396, filed on Aug. 31, 2012, granted, now 8,853,767, issued on Oct. 7, 2014.
Application 15/283,961 is a continuation in part of application No. 14/474,383, filed on Sep. 2, 2014, granted, now 9,576,970, issued on Feb. 21, 2017.
Application 17/222,697 is a reissue of application No. 15/283,961, filed on Oct. 3, 2016, granted, now 10,367,001, issued on Jul. 30, 2019.
Claims priority of application No. 10-2012-0059920 (KR), filed on Jun. 4, 2012.
Int. Cl. H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/10 (2023.01); H01L 29/786 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 29/78642 (2013.01); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 21 Claims
OG exemplary drawing
 
[ 21. A semiconductor device comprising:
a stack comprising conductive layers and insulating layers that are alternately stacked; and
a slit insulating layer passing through the stack in a stacking direction, an upper flat surface of the slit insulating layer comprising a first main pattern having a first edge and a second edge extending in a first direction, a first protruding pattern protruding from the first edge at a one end of the first main pattern in a second direction crossing the first direction, a second protruding pattern protruding from the second edge at the one end of the first main pattern in the second direction, a third protruding pattern protruding from the first edge at the other end of the first main pattern in the second direction, and a fourth protruding pattern protruding from the second edge at the other end of the first main pattern in the second direction,
wherein a lower flat surface of the slit insulating layer has a shape in which a center portion thereof and an end portion thereof have substantially the same width, and
wherein at least one of the first to fourth protruding patterns of the upper flat surface decreases in size towards the lower flat surface. ]