CPC H10N 70/8613 (2023.02) [H10N 70/021 (2023.02); H10N 70/046 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8828 (2023.02)] | 9 Claims |
1. A phase change memory (PCM) structure comprising:
a bottom electrode;
a first dielectric spacer disposed above and in contact with the bottom electrode, the first dielectric spacer comprising a vertical seam;
a second dielectric spacer disposed surrounding the first dielectric spacer and between the bottom electrode and the PCM layer;
a third dielectric spacer disposed between the bottom electrode and the PCM layer, the third dielectric spacer surrounding the second dielectric spacer;
a PCM layer disposed above the first dielectric spacer; and
a heater element disposed in the seam and in contact with the bottom electrode.
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