US 11,895,934 B2
Phase change memory with heater
Kangguo Cheng, Schenectady, NY (US); Chanro Park, Clifton Park, NY (US); Julien Frougier, Albany, NY (US); and Ruilong Xie, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 25, 2021, as Appl. No. 17/412,157.
Prior Publication US 2023/0074555 A1, Mar. 9, 2023
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8613 (2023.02) [H10N 70/021 (2023.02); H10N 70/046 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8828 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A phase change memory (PCM) structure comprising:
a bottom electrode;
a first dielectric spacer disposed above and in contact with the bottom electrode, the first dielectric spacer comprising a vertical seam;
a second dielectric spacer disposed surrounding the first dielectric spacer and between the bottom electrode and the PCM layer;
a third dielectric spacer disposed between the bottom electrode and the PCM layer, the third dielectric spacer surrounding the second dielectric spacer;
a PCM layer disposed above the first dielectric spacer; and
a heater element disposed in the seam and in contact with the bottom electrode.