CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02)] | 9 Claims |
1. A semiconductor device, comprising:
a magnetic tunneling junction (MTJ) on a substrate;
a top electrode on the MTJ;
a protective cap on and directly contacting all of a top surface of the top electrode, wherein the protective cap is made of conductive material; and
a metal interconnection on and directly contacting the protective cap.
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