US 11,895,926 B2
Magnetoresistive random access memory and method for fabricating the same
Hui-Lin Wang, Taipei (TW); Po-Kai Hsu, Tainan (TW); Ju-Chun Fan, Tainan (TW); Ching-Hua Hsu, Kaohsiung (TW); Yi-Yu Lin, Taichung (TW); and Hung-Yueh Chen, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 3, 2020, as Appl. No. 17/088,531.
Claims priority of application No. 202011083857.6 (CN), filed on Oct. 12, 2020.
Prior Publication US 2022/0115584 A1, Apr. 14, 2022
Int. Cl. H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01)
CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a magnetic tunneling junction (MTJ) on a substrate;
a top electrode on the MTJ;
a protective cap on and directly contacting all of a top surface of the top electrode, wherein the protective cap is made of conductive material; and
a metal interconnection on and directly contacting the protective cap.