CPC H10N 30/302 (2023.02) [G01L 1/16 (2013.01); H10N 30/082 (2023.02); H10N 30/306 (2023.02)] | 21 Claims |
1. An etching method for forming a vertical structure, the etching method comprising:
positioning a mask on a substrate, an opening pattern of the mask comprising a compensation pattern that is disposed at a corner of the opening pattern and is indented from the corner of the opening pattern towards an outer boundary of the mask; and
forming the vertical structure on the substrate through the opening pattern of the mask by a dry etching process.
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