US 11,895,872 B2
Thin film transistor with small storage capacitor with metal oxide switch
Jung Bae Kim, San Jose, CA (US); Dong Kil Yim, Pleasanton, CA (US); Soo Young Choi, Fremont, CA (US); and Lai Zhao, Campbell, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 21, 2021, as Appl. No. 17/382,080.
Application 17/382,080 is a continuation of application No. 16/243,314, filed on Jan. 9, 2019, granted, now 11,101,338.
Claims priority of provisional application 62/616,314, filed on Jan. 11, 2018.
Prior Publication US 2021/0376032 A1, Dec. 2, 2021
Int. Cl. H10K 59/121 (2023.01); H10K 59/126 (2023.01); H01L 27/12 (2006.01); G09G 3/3233 (2016.01)
CPC H10K 59/1216 (2023.02) [H10K 59/126 (2023.02); H10K 59/1213 (2023.02); G09G 3/3233 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0465 (2013.01); G09G 2300/0842 (2013.01); H01L 27/1225 (2013.01); H01L 27/1229 (2013.01); H01L 27/1255 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A sub-pixel circuit for a display, the sub-pixel circuit comprising:
a driving thin film transistor (TFT), the driving TFT comprising:
a first conductive channel in a gate insulating layer;
a first gate disposed in a first inter layer dielectric layer above the gate insulating layer;
a first source disposed in a buffer layer above the first inter layer dielectric layer and connected to the first conductive channel; and
a first drain disposed in the buffer layer and connected to the first conductive channel;
at least one switching TFT formed in a second inter layer dielectric layer above the buffer layer, wherein the at least one switching TFT is an oxide TFT; and
at least one storage capacitor, the at least one storage capacitor comprising:
a second conductive channel disposed in the gate insulating layer and isolated from the first conductive channel;
a second gate disposed in the first inter layer dielectric layer and isolated from the first gate; and
a via of the first source connected to the second conductive channel and the first source, wherein the at least one storage capacitor has a capacitance between about 1 fF and about 55 fF.