US 11,895,850 B2
Variable resistance memory device
Min Chul Han, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 7, 2021, as Appl. No. 17/496,000.
Claims priority of application No. 10-2021-0032764 (KR), filed on Mar. 12, 2021.
Prior Publication US 2022/0293680 A1, Sep. 15, 2022
Int. Cl. H10B 63/00 (2023.01)
CPC H10B 63/80 (2023.02) [H10B 63/24 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A variable resistance memory device, comprising:
a substrate;
memory cell structures on the substrate, the memory cell structures being spaced apart from each other in a first direction and a second direction, and the first direction and the second direction being parallel to a top surface of the substrate and intersecting each other; and
a dummy cell structure surrounding each of the memory cell structures, as viewed in a plan view, the dummy cell structure being a single body structure extending continuously between all the memory cell structures,
wherein each of the memory cell structures includes:
first conductive lines;
second conductive lines on the first conductive lines and intersecting the first conductive lines; and
memory cells between the first conductive lines and the second conductive lines, and
wherein the dummy cell structure includes:
first dummy conductive lines;
second dummy conductive lines on the first dummy conductive lines and intersecting the first dummy conductive lines; and
dummy memory cells between the first dummy conductive lines and the second dummy conductive lines.