US 11,895,847 B2
Magnetoresistive random access memory
Ting-Hsiang Huang, Tainan (TW); Yi-Chung Sheng, Tainan (TW); Sheng-Yuan Hsueh, Tainan (TW); Kuo-Hsing Lee, Hsinchu County (TW); and Chih-Kai Kang, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 15, 2022, as Appl. No. 17/987,795.
Application 17/987,795 is a continuation of application No. 17/207,728, filed on Mar. 21, 2021, granted, now 11,532,666.
Application 17/207,728 is a continuation of application No. 16/430,437, filed on Jun. 4, 2019, granted, now 10,991,757, issued on Apr. 27, 2021.
Claims priority of application No. 201910384092.0 (CN), filed on May 9, 2019.
Prior Publication US 2023/0071086 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/10 (2023.02) [H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a magnetic tunneling junction (MTJ) region and a logic region;
a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and
a first metal interconnection on the MTJ, wherein a top view of the first metal interconnection comprises an ellipse overlapping the circle and the circle contacts the ellipse directly.