CPC H10B 51/30 (2023.02) [G11C 11/223 (2013.01); H01L 29/516 (2013.01); H01L 29/7831 (2013.01); G11C 11/2257 (2013.01); G11C 11/2273 (2013.01)] | 25 Claims |
1. A ferroelectric field-effect transistor (FeFET), comprising:
first and second gate electrodes;
source and drain regions;
a region between and physically connecting the source and drain regions, the region comprising semiconductor material;
a first gate dielectric between the region and the first gate electrode, the first gate dielectric comprising a ferroelectric dielectric, and the first gate dielectric having a first lateral width; and
a second gate dielectric between the region and the second gate electrode, the second gate dielectric having a second lateral width, the second lateral width different than the first lateral width.
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