CPC H10B 12/37 (2023.02) [H10B 12/038 (2023.02); H10B 12/34 (2023.02); H10B 12/48 (2023.02)] | 18 Claims |
1. A semiconductor device, comprising:
an insulating base including a trench;
a transistor comprising a gate electrode, a vertical channel in the trench, a drain electrode and a source electrode;
an isolation layer on the gate electrode in the trench; and
a capacitor comprising:
a trench capacitor portion comprising a lower conductive layer, wherein the trench capacitor portion is on the isolation layer formed within the trench; and
a stacked capacitor portion comprising a plurality of stacked conductive layers, wherein the stacked capacitor portion is coupled to the source electrode of the transistor formed outside the trench.
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