US 11,895,825 B2
Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same
Yun-Feng Kao, Hsinchu (TW); and Katherine H. Chiang, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Sep. 24, 2021, as Appl. No. 17/483,859.
Claims priority of provisional application 63/185,374, filed on May 7, 2021.
Prior Publication US 2022/0359529 A1, Nov. 10, 2022
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/37 (2023.02) [H10B 12/038 (2023.02); H10B 12/34 (2023.02); H10B 12/48 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an insulating base including a trench;
a transistor comprising a gate electrode, a vertical channel in the trench, a drain electrode and a source electrode;
an isolation layer on the gate electrode in the trench; and
a capacitor comprising:
a trench capacitor portion comprising a lower conductive layer, wherein the trench capacitor portion is on the isolation layer formed within the trench; and
a stacked capacitor portion comprising a plurality of stacked conductive layers, wherein the stacked capacitor portion is coupled to the source electrode of the transistor formed outside the trench.