US 11,895,422 B2
Solid-state imaging device
Atsumi Niwa, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed on Oct. 17, 2022, as Appl. No. 17/967,566.
Application 17/967,566 is a continuation of application No. 17/378,637, filed on Jul. 16, 2021, granted, now 11,490,045.
Application 17/378,637 is a continuation of application No. 17/084,583, filed on Oct. 29, 2020, granted, now 11,546,542.
Application 17/084,583 is a continuation of application No. 16/484,946, granted, now 11,082,656, previously published as PCT/JP2018/026757, filed on Jul. 17, 2018.
Claims priority of application No. 2017-209045 (JP), filed on Oct. 30, 2017.
Prior Publication US 2023/0043681 A1, Feb. 9, 2023
Int. Cl. H04N 25/79 (2023.01); H04N 25/704 (2023.01); H04N 25/772 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/79 (2023.01) [H04N 25/704 (2023.01); H04N 25/772 (2023.01); H01L 27/14634 (2013.01)] 39 Claims
OG exemplary drawing
 
1. An event detection sensor comprising:
a first chip including:
a photoelectric conversion region; and
a first portion of current-voltage conversion circuit, wherein the current-voltage conversion circuit is coupled to the photoelectric conversion region, and
a second chip including:
a second portion of the current-voltage conversion circuit;
a buffer coupled to the current-voltage conversion circuit; and
a quantizer coupled to the buffer via a capacitor, wherein the quantizer outputs an event detection signal,
wherein, the first chip and the second chip are electrically connected by a metal bonding.