US 11,895,417 B2
Image sensor
Celine Mas, Poisat (FR); Matteo Maria Vignetti, Aix les Bains (FR); and Francois Agut, Saint Vital (FR)
Assigned to STMicroelectronics France, Montrouge (FR); STMicroelectronics (Grenoble 2) SAS, Grenoble (FR); and STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics France, Montrouge (FR); STMicroelectronics (Grenoble 2) SAS, Grenoble (FR); and STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Feb. 8, 2022, as Appl. No. 17/667,485.
Claims priority of application No. 2101644 (FR), filed on Feb. 19, 2021.
Prior Publication US 2022/0272291 A1, Aug. 25, 2022
Int. Cl. H04N 25/709 (2023.01); H04N 25/75 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/709 (2023.01) [H04N 25/75 (2023.01); H01L 27/1463 (2013.01); H01L 27/14609 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An image sensor comprising:
an array of pixels arranged inside and on top of a region of a semiconductor substrate electrically insulated from a remainder of the substrate by insulating trenches crossing the substrate, wherein each pixel comprises a photoconversion area and at least two assemblies, wherein each assembly comprises a memory area and a transfer gate coupling the memory area to the photoconversion area; and
a first circuit configured to apply, for each pixel and at least during each integration phase, a first bias voltage different from a ground potential to a portion of the substrate having the pixel arranged inside and on top of it, wherein the first bias voltage is a positive voltage.