US 11,894,833 B2
Bulk acoustic wave resonator
Jea Shik Shin, Hwaseong-si (KR); Duck Hwan Kim, Goyang-si (KR); Chul Soo Kim, Hwaseong-si (KR); Sang Uk Son, Yongin-si (KR); In Sang Song, Osan-si (KR); and Moon Chul Lee, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 17, 2020, as Appl. No. 16/851,729.
Application 16/851,729 is a continuation of application No. 15/494,866, filed on Apr. 24, 2017, granted, now 10,666,224.
Application 15/494,866 is a continuation of application No. 13/691,114, filed on Nov. 30, 2012, granted, now 9,634,643, issued on Apr. 25, 2017.
Claims priority of application No. 10-2011-0127686 (KR), filed on Dec. 1, 2011.
Prior Publication US 2020/0244249 A1, Jul. 30, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/17 (2006.01); H03H 9/02 (2006.01); H03H 3/02 (2006.01)
CPC H03H 9/173 (2013.01) [H03H 3/02 (2013.01); H03H 9/02118 (2013.01); H03H 2003/021 (2013.01); Y10T 29/42 (2015.01)] 8 Claims
OG exemplary drawing
 
1. A bulk acoustic wave resonator (BAWR), comprising:
a bulk acoustic wave resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode;
an air gap disposed below the bulk acoustic wave resonance unit;
an air edge formed at a distance from a center of the bulk acoustic wave resonance unit; and
a frame aligned over an outer portion of the first electrode in the bulk acoustic wave resonance unit.