US 11,894,829 B2
Variation of metal layer stack under under bump metallization (UBM)
Ute Steinhaeusser, Munich (DE); Niklaas Konopka, Munich (DE); and Alexander Landel, Munich (DE)
Assigned to RF360 Singapore Pte. Ltd., Singapore (SG)
Filed by RF360 Singapore Pte. Ltd., Singapore (SG)
Filed on Apr. 21, 2020, as Appl. No. 16/854,769.
Claims priority of provisional application 62/934,910, filed on Nov. 13, 2019.
Prior Publication US 2021/0143790 A1, May 13, 2021
Int. Cl. H03H 9/05 (2006.01); H01L 23/00 (2006.01); H03H 9/64 (2006.01); H03H 3/08 (2006.01); H10N 30/06 (2023.01); H10N 30/87 (2023.01)
CPC H03H 9/059 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H03H 3/08 (2013.01); H03H 9/64 (2013.01); H10N 30/06 (2023.02); H10N 30/875 (2023.02); H10N 30/877 (2023.02); H01L 2224/0401 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05655 (2013.01); H01L 2924/0132 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A chip, comprising:
a pad;
a first passivation layer, wherein a first portion of the first passivation layer extends over a first portion of the pad;
a first metal layer between the first portion of the pad and the first portion of the first passivation layer; and
an under bump metallization (UBM) electrically coupled to a second portion of the pad, wherein a first portion of the UBM is over the second portion of the pad.