CPC H03H 9/0222 (2013.01) [H03F 3/24 (2013.01); H03H 9/02559 (2013.01); H03H 9/02574 (2013.01); H03H 9/02834 (2013.01); H03H 9/02866 (2013.01); H03H 9/058 (2013.01); H03H 9/145 (2013.01); H03H 9/25 (2013.01); H03H 9/465 (2013.01); H03H 9/54 (2013.01); H03H 9/64 (2013.01); H03H 9/6489 (2013.01); H04B 1/0057 (2013.01); H03F 2200/451 (2013.01)] | 20 Claims |
1. An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer electrode on the piezoelectric layer;
high velocity layers on opposing side of the piezoelectric layer, the high velocity layers including a first high velocity layer having a first acoustic velocity and a second high velocity layer having a second acoustic velocity;
a temperature compensation layer in physical contact with the interdigital transducer electrode and positioned between the first high velocity layer and the piezoelectric layer; and
an adhesion layer within the temperature compensation layer such that the adhesion layer is positioned between a first portion of the temperature compensation layer and a second portion of the compensation layer, the adhesion layer arranged to enhance power durability of the acoustic wave device, the acoustic wave device being configured to generate a boundary acoustic wave such that acoustic energy is concentrated at an interface of the piezoelectric layer and the temperature compensation layer, the boundary acoustic wave having a velocity that is less than both the first acoustic velocity and the second acoustic velocity, the boundary acoustic wave having a wavelength of λ, and the thickness of the second high velocity layer being at least 10λ.
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