US 11,894,815 B2
Power amplifier and electronic device
Qiang Su, Guangzhou (CN); and Ping Li, Guangzhou (CN)
Assigned to SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD., Guangzhou (CN)
Filed by SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD., Guangzhou (CN)
Filed on Dec. 26, 2020, as Appl. No. 17/134,386.
Application 17/134,386 is a continuation of application No. PCT/CN2019/127408, filed on Dec. 23, 2019.
Claims priority of application No. 201911014056.1 (CN), filed on Oct. 23, 2019.
Prior Publication US 2021/0126601 A1, Apr. 29, 2021
Int. Cl. H03F 1/22 (2006.01); H03F 3/24 (2006.01); H03F 1/32 (2006.01); H03F 3/195 (2006.01)
CPC H03F 3/245 (2013.01) [H03F 1/3205 (2013.01); H03F 3/195 (2013.01); H03F 2200/451 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A power amplifier, comprising:
a power amplification circuit and a linearity compensation circuit;
wherein the linearity compensation circuit is connected between a transistor amplification circuit and a biasing circuit of the power amplification circuit, to linearly compensate a nonlinear distortion of the power amplification circuit;
wherein the transistor amplification circuit comprises: a field-effect-transistor amplification circuit or a triode amplification circuit;
wherein when the transistor amplification circuit is a field-effect-transistor amplification circuit, the linearity compensation circuit comprises: a first field-effect transistor, a first resistor, a second resistor, a first capacitor, a second capacitor, and a third capacitor; and
wherein a gate electrode of the first field-effect transistor is connected to a first end of the second resistor, a second end of the second resistor is connected to the biasing circuit, a source electrode of the first field-effect transistor is connected to a first end of the first resistor, a second end of the first resistor is grounded, the first capacitor is connected in parallel with the first resistor, a drain electrode of the first field-effect transistor is connected to a first end of the third capacitor, a second end of the third capacitor is connected to the field-effect-transistor amplification circuit, a first end of the second capacitor is connected to the gate electrode of the first field-effect transistor, and a second end of the second capacitor is grounded.