US 11,894,783 B2
Semiconductor device
Shinji Sakai, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Apr. 16, 2021, as Appl. No. 17/232,262.
Claims priority of application No. 2020-167185 (JP), filed on Oct. 1, 2020.
Prior Publication US 2022/0109380 A1, Apr. 7, 2022
Int. Cl. H02M 7/53 (2006.01); H02M 7/537 (2006.01); H03K 17/567 (2006.01); H02M 1/08 (2006.01); H02M 1/088 (2006.01)
CPC H02M 7/537 (2013.01) [H02M 1/08 (2013.01); H02M 1/088 (2013.01); H03K 17/567 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
first and second power transistors connected in parallel with each other and having different saturated currents; and
a gate driver driving the first and second power transistors with individual gate voltages, respectively,
the gate driver includes
a drive circuit receiving an input signal and outputting a drive signal,
a first amplifier amplifying the drive signal in accordance with first power voltage to supply a first amplified drive signal to a gate of the first power transistor, and
a second amplifier amplifying the drive signal in accordance with second power voltage different from the first power voltage to supply a second amplified drive signal to a gate of the second power transistor.