CPC H02M 7/537 (2013.01) [H02M 1/08 (2013.01); H02M 1/088 (2013.01); H03K 17/567 (2013.01)] | 12 Claims |
1. A semiconductor device comprising:
first and second power transistors connected in parallel with each other and having different saturated currents; and
a gate driver driving the first and second power transistors with individual gate voltages, respectively,
the gate driver includes
a drive circuit receiving an input signal and outputting a drive signal,
a first amplifier amplifying the drive signal in accordance with first power voltage to supply a first amplified drive signal to a gate of the first power transistor, and
a second amplifier amplifying the drive signal in accordance with second power voltage different from the first power voltage to supply a second amplified drive signal to a gate of the second power transistor.
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