US 11,894,503 B2
Light emitting diode device
Shu-Wei Chen, Hsinchu (TW); Ching-Huai Ni, Hsinchu (TW); Kuo-Wei Huang, Hsinchu (TW); and Jia-Jhang Kuo, Hsinchu (TW)
Assigned to Lextar Electronics Corporation, Hsinchu (TW)
Filed by Lextar Electronics Corporation, Hsinchu (TW)
Filed on Nov. 24, 2022, as Appl. No. 18/058,765.
Application 18/058,765 is a continuation of application No. 17/027,731, filed on Sep. 22, 2020, granted, now 11,538,970.
Claims priority of application No. 202010151258.7 (CN), filed on Mar. 6, 2020.
Prior Publication US 2023/0090352 A1, Mar. 23, 2023
Int. Cl. H01L 33/60 (2010.01); H01L 33/48 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/02 (2010.01); H01L 33/58 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 33/486 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 2933/005 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A light emitting diode device comprising:
a substrate;
a frame disposed on the substrate, the frame and the substrate collectively defining a concave portion, the frame comprising aromatic ring bonded high-grade fat-locked semi-aromatic nylon resin and polyphthalamide, and having a light reflectivity ranging from 20% to 40%;
an LED die disposed on the substrate and within the concave portion; and
a transparent layer filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.