US 11,894,491 B2
Semiconductor light-emitting device
Chao-Hsing Chen, Hsinchu (TW); Jia-Kuen Wang, Hsinchu (TW); Tzu-Yao Tseng, Hsinchu (TW); Tsung-Hsun Chiang, Hsinchu (TW); Bo-Jiun Hu, Hsinchu (TW); Wen-Hung Chuang, Hsinchu (TW); and Yu-Ling Lin, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Mar. 7, 2023, as Appl. No. 18/118,488.
Application 18/118,488 is a continuation of application No. 17/712,690, filed on Apr. 4, 2022, granted, now 11,764,332.
Application 17/712,690 is a continuation of application No. 16/938,249, filed on Jul. 24, 2020, granted, now 11,329,195, issued on May 10, 2022.
Application 16/938,249 is a continuation of application No. 16/520,076, filed on Jul. 23, 2019, granted, now 10,749,075, issued on Aug. 18, 2020.
Application 16/520,076 is a continuation of application No. 15/265,069, filed on Sep. 14, 2016, granted, now 10,411,162, issued on Sep. 10, 2019.
Application 15/265,069 is a continuation in part of application No. 14/948,733, filed on Nov. 23, 2015, granted, now 9,761,774, issued on Sep. 12, 2017.
Application 14/948,733 is a continuation of application No. 14/853,511, filed on Sep. 14, 2015, granted, now 9,461,209, issued on Sep. 12, 2017.
Application 14/853,511 is a continuation in part of application No. 14/554,488, filed on Nov. 26, 2014, granted, now 9,337,394, issued on May 10, 2016.
Application 15/265,069 is a continuation of application No. 14/470,396, filed on Aug. 27, 2014, granted, now 9,768,227, issued on Sep. 19, 2017.
Claims priority of provisional application 62/092,422, filed on Dec. 16, 2014.
Claims priority of application No. 102130742 (TW), filed on Aug. 27, 2013; application No. 102143409 (TW), filed on Nov. 27, 2013; application No. 103119845 (TW), filed on Jun. 6, 2014; and application No. 103124091 (TW), filed on Jul. 11, 2014.
Prior Publication US 2023/0238488 A1, Jul. 27, 2023
Int. Cl. H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/24 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01); H01L 33/02 (2010.01); H01L 33/08 (2010.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/382 (2013.01) [H01L 33/00 (2013.01); H01L 33/10 (2013.01); H01L 33/24 (2013.01); H01L 33/385 (2013.01); H01L 33/387 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 33/0012 (2013.01); H01L 33/02 (2013.01); H01L 33/08 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device, comprising:
a substrate;
a semiconductor stack formed on the substrate and comprising a first semiconductor layer and a second semiconductor layer, wherein the second semiconductor layer is closer to the substrate than the first semiconductor layer is to the substrate;
a first reflective layer formed on the first semiconductor layer and comprising a plurality of vias, wherein the first reflective layer comprises a material having a refractive index lower than that of the group III-V semiconductor;
a plurality of contact structures respectively filled in the plurality of vias and electrically connected to the first semiconductor layer, wherein the plurality of contact structures is surrounded by the first reflective layer;
a second reflective layer comprising metal material formed on the first reflective layer and contacting the plurality of contact structures;
a plurality of conductive vias surrounded by the semiconductor stack;
a connecting layer formed in the plurality of conductive vias and electrically connected to the second semiconductor layer;
a second insulating layer formed on the connecting layer and comprising a third opening on the plurality contact structures and a fourth opening on the plurality contact structures;
a first pad portion formed on the fourth opening and electrically connected to the second semiconductor layer;
a second pad portion formed on the third opening and electrically connected to the first semiconductor layer, wherein a shortest distance between two of the plurality of conductive vias is larger than a shortest distance between the first pad portion and the second pad portion; and
wherein the first pad portion comprises a first face and a second face protruding the first face, a height is formed between the first face and the second face, and is larger than or equal to a thickness of the second insulating layer in a cross-sectional view of the semiconductor light-emitting device.