US 11,894,477 B2
Electrical device with stress buffer layer and stress compensation layer
Andrew Clarke, Santa Barbara, CA (US); Emily Thomson, Lompoc, CA (US); and Michael Rondon, Santa Rosa, CA (US)
Assigned to Raytheon Company, Tewksbury, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on May 17, 2021, as Appl. No. 17/322,073.
Prior Publication US 2022/0367740 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 31/0392 (2006.01); H01L 31/0296 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/03925 (2013.01) [H01L 27/1465 (2013.01); H01L 27/1469 (2013.01); H01L 31/02966 (2013.01); H01L 31/1032 (2013.01); H01L 31/1832 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An electrical device comprising:
a substrate;
a temperature-sensitive material supported by the substrate, the temperature-sensitive material having a thermal degradation temperature in a range from 50° C. to 250° C.; and
(i) a stress buffer layer supported by the substrate and formable at a temperature less than the thermal degradation temperature of the temperature-sensitive material such that the stress buffer layer is configured to minimize strain at an interface of the temperature-sensitive material; and/or (ii) a stress compensation layer supported by the substrate and formable at a temperature less than the thermal degradation temperature of the temperature-sensitive material such that the stress compensation layer is configured to counteract forces imparted to the substrate to thereby control an amount of substrate bow;
wherein the electrical device includes both the stress compensation layer and the stress buffer layer, which are both aluminum nitride (AlNx) layers.