	US 11,894,469 B2
	Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same
Sanghyun Jo, Seoul (KR); Heejun Yang, Suwon-si (KR); Hyeonjin Shin, Suwon-si (KR); and Shoujun Zheng, Suwon-si (KR)
Assigned to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR); and SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Mar. 6, 2020, as Appl. No. 16/811,549.
Claims priority of application No. 10-2019-0050721 (KR), filed on Apr. 30, 2019.
Prior Publication US 2020/0350442 A1, Nov. 5, 2020
Int. Cl. H01L 29/00 (2006.01); H01L 29/88 (2006.01); H01L 29/267 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 31/032 (2006.01); H01L 29/16 (2006.01)

CPC H01L 29/882 (2013.01) [H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/417 (2013.01); H01L 29/66977 (2013.01); H01L 31/032 (2013.01)]

32 Claims

1. A resonant tunneling device, comprising:

a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material;

a first insulating layer on the first two-dimensional semiconductor layer; and

a second two-dimensional semiconductor layer on the first insulating layer, the second two-dimensional semiconductor layer including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material,

wherein a crystal lattice of the first two-dimensional semiconductor material and a crystal lattice of the second two-dimensional semiconductor material are aligned with each other, such that the first two-dimensional semiconductor material and the second two-dimensional semiconductor material are configured to have respective energy bands that are aligned with each other.