CPC H01L 29/78693 (2013.01) [H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/6675 (2013.01)] | 2 Claims |
1. A doped metal oxide semiconductor, characterized in that the doped metal oxide semiconductor is a rare-earth oxide doped metal oxide; in which the metal oxide is indium tin oxide having an In:Sn molar ratio of 2:1 to 5:1 or indium tin zinc oxide having molar ratios of In, Sn, and Zn in ranges of: 0.2≤In/(In+Sn+Zn)≤0.8, 0.2≤Sn/(In+Sn+Zn)≤0.4, 0<Zn/(In+Sn+Zn)≤0.5; the rare-earth oxide comprises ytterbium oxide; an uniform doping molar ratios of ytterbium to the indium and tin or indium and tin and zinc of the metal oxide is in a range from 0.1:1 to 0.4:1; there are recombination centers for photo-induced carriers generated in the doped metal oxide semiconductor.
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