US 11,894,461 B2
Dipoles in semiconductor devices
Hsiang-Pi Chang, New Taipei (TW); Yen-Tien Tung, Hsinchu (TW); Dawei Heh, Hsinchu (TW); Chung-Liang Cheng, Changhua County (TW); I-Ming Chang, Hsinchu (TW); Yao-Sheng Huang, Kaohsiung (TW); Tzer-Min Shen, Hsinchu (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 29, 2021, as Appl. No. 17/537,339.
Claims priority of provisional application 63/166,881, filed on Mar. 26, 2021.
Prior Publication US 2022/0310846 A1, Sep. 29, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/78391 (2014.09) [H01L 29/401 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a first transistor and a second transistor formed on the semiconductor substrate, each one of the first and second transistors further comprising:
an interfacial layer formed on the semiconductor substrate;
a high-k dielectric layer formed on the interfacial layer; and
a conductive gate electrode layer formed on the high-k dielectric layer,
wherein at least one of the high-k dielectric layer and the interfacial layer is doped with:
a first dopant species with a first concentration,
a second dopant species with a second concentration, and
a third dopant species with a third concentration,
wherein the first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity,
wherein the third dopant species forms a plurality of second dipole elements having a second polarity, and
wherein the first and second polarities are opposite,
wherein the first transistor has a first concentration ratio of the first concentration of the first dopant species to the third concentration of the third dopant species in the at least one of the high-k dielectric layer and the interfacial layer of the first transistor,
wherein the second transistor has a second concentration ratio of first concentration of the first dopant species to the third concentration of the third dopant species in the at least one of the high-k dielectric layer and the interfacial layer of the second transistor, and
wherein the first concentration ratio is different from the second concentration ratio.