US 11,894,454 B2
Silicon carbide field-effect transistors
Andrei Konstantinov, Sollentuna (SE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Sep. 27, 2021, as Appl. No. 17/448,916.
Application 17/448,916 is a continuation of application No. 16/667,664, filed on Oct. 29, 2019, granted, now 11,139,394.
Claims priority of provisional application 62/894,017, filed on Aug. 30, 2019.
Prior Publication US 2022/0013661 A1, Jan. 13, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 29/80 (2006.01)
CPC H01L 29/7802 (2013.01) [H01L 29/1608 (2013.01); H01L 29/456 (2013.01); H01L 29/4966 (2013.01); H01L 29/802 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) comprising:
a SiC substrate of a first conductivity type;
a drift region of the first conductivity type disposed on the SiC substrate;
a spreading layer of the first conductivity type disposed in the drift region;
a body region of a second conductivity type disposed in the spreading layer;
a source region of the first conductivity type disposed in the body region; and
a gate structure including:
a gate oxide layer;
an aluminum nitride (AlN) layer disposed on the gate oxide layer; and
a gallium nitride (GaN) layer of the second conductivity type disposed on the AlN layer.