US 11,894,448 B2
Structure and method for vertical tunneling field effect transistor with leveled source and drain
Harry-Hak-Lay Chuang, Singapore (SG); Yi-Ren Chen, Taoyuan County (TW); Chi-Wen Liu, Hsin-Chu (TW); Chao-Hsiung Wang, Hsin-Chu (TW); and Ming Zhu, Singapore (SG)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 19, 2021, as Appl. No. 17/406,861.
Application 14/827,464 is a division of application No. 13/795,240, filed on Mar. 12, 2013, granted, now 9,111,780, issued on Aug. 18, 2015.
Application 17/406,861 is a continuation of application No. 16/160,308, filed on Oct. 15, 2018, granted, now 11,101,371.
Application 16/160,308 is a continuation of application No. 14/827,464, filed on Aug. 17, 2015, granted, now 10,103,253, issued on Oct. 16, 2018.
Prior Publication US 2021/0384327 A1, Dec. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01)
CPC H01L 29/66977 (2013.01) [H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 27/0802 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 29/66666 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first protrusion and a second protrusion disposed on a substrate;
a first source/drain feature including a first dopant disposed in the first protrusion;
a second source/drain feature including a second dopant disposed in the first protrusion, the substrate and the second protrusion, the second dopant being different than the first dopant, wherein the second source/drain feature is spaced apart from the first source/drain feature in the first protrusion;
a gate dielectric disposed along a sidewall of the first protrusion;
a gate electrode disposed on the gate dielectric along the sidewall of the first protrusion;
a pickup feature disposed in a top portion of the second protrusion, the pickup feature includes the second dopant at a greater concentration than the second source/drain feature.