CPC H01L 29/66977 (2013.01) [H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 27/0802 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 29/66666 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A device comprising:
a first protrusion and a second protrusion disposed on a substrate;
a first source/drain feature including a first dopant disposed in the first protrusion;
a second source/drain feature including a second dopant disposed in the first protrusion, the substrate and the second protrusion, the second dopant being different than the first dopant, wherein the second source/drain feature is spaced apart from the first source/drain feature in the first protrusion;
a gate dielectric disposed along a sidewall of the first protrusion;
a gate electrode disposed on the gate dielectric along the sidewall of the first protrusion;
a pickup feature disposed in a top portion of the second protrusion, the pickup feature includes the second dopant at a greater concentration than the second source/drain feature.
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