CPC H01L 29/66545 (2013.01) [H01L 21/28088 (2013.01); H01L 21/82345 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01)] | 20 Claims |
1. A method of making a semiconductor device comprising:
depositing a TiN layer over a substrate;
doping a first portion of the TiN layer using an oxygen-containing plasma treatment;
doping a second portion of the TiN layer using a nitrogen-containing plasma treatment, wherein the second portion of the TiN layer directly contacts the first portion of the TiN layer;
forming a first metal gate electrode over the first portion of the TiN layer; and
forming a second metal gate electrode over the second portion of the TiN layer, wherein the first metal gate electrode has a different work function from the second metal gate electrode, the second metal gate electrode directly contacts the first metal gate electrode, a top-most surface of the first metal gate electrode is co-planar with a top-most surface of the second metal gate electrode, and at least one of the first metal gate electrode or the second metal gate electrode has a variable width in a direction parallel to a top surface of the substrate.
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