	US 11,894,441 B2
	High electron mobility transistor and method for fabricating the same
Chun-Ming Chang, Kaohsiung (TW); Che-Hung Huang, Hsinchu (TW); Wen-Jung Liao, Hsinchu (TW); and Chun-Liang Hou, Hsinchu County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 16, 2022, as Appl. No. 17/745,841.
Application 17/745,841 is a division of application No. 16/666,414, filed on Oct. 29, 2019, granted, now 11,367,779.
Claims priority of application No. 201910953637.5 (CN), filed on Oct. 9, 2019.
Prior Publication US 2022/0278222 A1, Sep. 1, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 29/778 (2006.01)

CPC H01L 29/66462 (2013.01) [H01L 29/7786 (2013.01)]

7 Claims

1. A method for fabricating high electron mobility transistor (HEMT), comprising:

forming a buffer layer on a substrate;

forming a first barrier layer on the buffer layer;

forming a first hard mask on the first barrier layer;

removing the first hard mask and the first barrier layer to form a recess;

forming a second barrier layer in the recess while the first hard mask is on the first barrier layer and sidewalls of the first hard mask and the second barrier layer are aligned; and

forming a p-type semiconductor layer on the second barrier layer and directly contacting the first hard mask, wherein a topmost surface of the first hard mask is lower than a top surface of the p-type semiconductor layer.