US 11,894,440 B2
Silicon carbide MOSFET device and manufacturing method thereof
Jiakun Wang, Hangzhou (CN); and Hui Chen, Hangzhou (CN)
Assigned to HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD., Hangzhou (CN)
Filed by Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd., Hangzhou (CN)
Filed on Sep. 20, 2021, as Appl. No. 17/479,314.
Claims priority of application No. 202010996569.3 (CN), filed on Sep. 21, 2020.
Prior Publication US 2022/0093768 A1, Mar. 24, 2022
Int. Cl. H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/66068 (2013.01) [H01L 21/047 (2013.01); H01L 21/0465 (2013.01); H01L 29/7827 (2013.01); H01L 29/1095 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A manufacturing method of a silicon carbide MOSFET device, comprising:
providing a substrate of a first doping type;
forming a patterned first barrier layer on an upper surface of the substrate;
forming a base region extending from the upper surface to an inside of the substrate through oblique implantation in a first ion implantation process by using a first barrier layer as a mask, the base region is of a second doping type;
forming a source region of the first doping type in the substrate;
forming a contact region of the second doping type in the substrate; and
forming a gate structure,
wherein, an implantation angle of the first ion implantation process is adjusted so that the base region extends below a part of the first barrier layer, and the implantation angle of the first ion implantation process is an angle between an implanting direction of the first ion implantation process and the upper surface of the substrate; and
wherein forming the source region comprises:
forming a second barrier layer on the upper surface of the substrate; and
forming the source region extending from the upper surface to the inside of the substrate through self-aligned implantation in a second ion implantation process by using the first barrier layer and the second barrier layer as a mask,
wherein, the second barrier layer is located between the first barrier layers and is separated from the first barrier layer.