CPC H01L 29/45 (2013.01) [H01L 21/823425 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 23/5226 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/7851 (2013.01); H01L 21/823807 (2013.01); H01L 29/456 (2013.01); H01L 2029/7858 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first channel, a first source and a first drain;
a second channel, a second source and a second drain; and
a contact coupled to the first source and the second source, wherein:
the first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer,
the first crystal semiconductor layer is separated from the second crystal semiconductor layer by an alloy layer,
each of the first and second crystal semiconductor layers includes a multi-layer of different crystal semiconductor materials, and
the contact contacts the alloy layer and is separated from the first and second crystal semiconductor layers by the alloy layer.
|