US 11,894,438 B2
Semiconductor device and manufacturing method thereof
Yee-Chia Yeo, Hsinchu (TW); Sung-Li Wang, Zhubei (TW); Chi On Chui, Hsinchu (TW); Jyh-Cherng Sheu, Hsinchu (TW); Hung-Li Chiang, Taipei (TW); and I-Sheng Chen, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 21, 2021, as Appl. No. 17/353,460.
Application 17/353,460 is a continuation of application No. 16/814,154, filed on Mar. 10, 2020, granted, now 11,043,570, issued on Jun. 22, 2021.
Application 16/814,154 is a continuation of application No. 16/228,872, filed on Dec. 21, 2018, granted, now 10,593,775, issued on Mar. 17, 2020.
Application 16/228,872 is a continuation of application No. 15/418,995, filed on Jan. 30, 2017, granted, now 10,164,042, issued on Dec. 25, 2018.
Claims priority of provisional application 62/427,597, filed on Nov. 29, 2016.
Prior Publication US 2021/0313438 A1, Oct. 7, 2021
Int. Cl. H01L 29/45 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/45 (2013.01) [H01L 21/823425 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 23/5226 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/7851 (2013.01); H01L 21/823807 (2013.01); H01L 29/456 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first channel, a first source and a first drain;
a second channel, a second source and a second drain; and
a contact coupled to the first source and the second source, wherein:
the first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer,
the first crystal semiconductor layer is separated from the second crystal semiconductor layer by an alloy layer,
each of the first and second crystal semiconductor layers includes a multi-layer of different crystal semiconductor materials, and
the contact contacts the alloy layer and is separated from the first and second crystal semiconductor layers by the alloy layer.