US 11,894,431 B2
Memory device with fixed negative charge plug
Dae Hwan Yun, Icheon-si (KR); and Gil Bok Choi, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 15, 2021, as Appl. No. 17/231,515.
Claims priority of application No. 10-2020-0134633 (KR), filed on Oct. 16, 2020.
Prior Publication US 2022/0123113 A1, Apr. 21, 2022
Int. Cl. H01L 29/40 (2006.01); H10B 43/27 (2023.01)
CPC H01L 29/408 (2013.01) [H10B 43/27 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A memory device comprising:
a stack structure including word lines and a select line;
a vertical hole vertically penetrating the stack structure; and
a memory layer, a channel layer, and a plug, sequentially formed along an inner side surface of the vertical hole,
wherein the plug includes a material layer having a fixed negative charge, and
wherein a bottom surface of the material layer is located between a bottom surface and a top surface of the select line.