US 11,894,408 B2
Dual facing BSI image sensors with wafer level stacking
Ping-Yin Liu, Yonghe (TW); Yeur-Luen Tu, Taichung (TW); Chia-Shiung Tsai, Hsin-Chu (TW); Xiaomeng Chen, Hsinchu (TW); and Pin-Nan Tseng, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 14, 2021, as Appl. No. 17/347,001.
Application 15/651,402 is a division of application No. 14/039,640, filed on Sep. 27, 2013, granted, now 9,711,555, issued on Jul. 18, 2017.
Application 17/347,001 is a continuation of application No. 16/658,355, filed on Oct. 21, 2019, granted, now 11,037,978.
Application 16/658,355 is a continuation of application No. 15/651,402, filed on Jul. 17, 2017, granted, now 10,453,889, issued on Oct. 22, 2019.
Prior Publication US 2021/0305292 A1, Sep. 30, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1464 (2013.01) [H01L 27/14618 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first image sensor element having a first surface that includes a first conductive portion and a first dielectric portion;
a second image sensor element having a photosensitive region and a second surface that includes a second dielectric portion;
a processing element disposed between the first and second image sensors, the processing element having a third surface that includes a second conductive portion and a third dielectric portion and a fourth surface that include a fourth dielectric portion, wherein the second conductive portion directly interfaces with the first conductive portion, the third dielectric portion directly interfaces with first dielectric portion and the fourth dielectric portion directly interfaces with the second dielectric portion; and
a first conductive feature extending from the photosensitive region to the processing element.