US 11,894,406 B2
Solid-state imaging device and electronic apparatus
Hiromi Okazaki, Kanagawa (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Dec. 22, 2022, as Appl. No. 18/145,221.
Application 15/084,912 is a division of application No. 14/279,632, filed on May 16, 2014, granted, now 9,570,501, issued on Feb. 14, 2017.
Application 18/145,221 is a continuation of application No. 17/216,102, filed on Mar. 29, 2021, granted, now 11,569,286.
Application 17/216,102 is a continuation of application No. 16/818,080, filed on Mar. 13, 2020, granted, now 11,271,025, issued on Mar. 8, 2022.
Application 16/818,080 is a continuation of application No. 15/850,947, filed on Dec. 21, 2017, granted, now 10,615,207, issued on Apr. 7, 2020.
Application 15/850,947 is a continuation of application No. 15/449,662, filed on Mar. 3, 2017, granted, now 9,893,106, issued on Feb. 13, 2018.
Application 15/449,662 is a continuation of application No. 15/084,912, filed on Mar. 30, 2016, granted, now 10,319,769, issued on Jun. 11, 2019.
Claims priority of application No. 2013-109636 (JP), filed on May 24, 2013.
Prior Publication US 2023/0126548 A1, Apr. 27, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14656 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light-detecting device, comprising:
a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side, the first side and the second side each extending in a first direction;
a plurality of photoelectric conversion units disposed in the semiconductor substrate;
a first trench region disposed in the semiconductor substrate between two of the plurality of photoelectric conversion units in the first direction;
a first light shielding region disposed above the first side, wherein the first light shielding region is above at least a part of the first trench region in a second direction, the second direction being perpendicular to the first direction, and the first light shielding region is offset from a center portion of the first trench region in a third direction;
a second trench region disposed in the semiconductor substrate adjacent to at least one of the plurality of photoelectric conversion units in the first direction; and
a second light shielding region disposed above the first side, wherein the second light shielding region is above at least a part of the second trench region in the second direction and offset from a center portion of the second trench region in a fourth direction opposite the third direction,
wherein a distance between a center of the first trench region and a center of the second trench region is different from a distance between a center of the first light shielding region and a center of the second light shielding region in a cross-sectional view.