US 11,894,398 B2
Photodetector, display substrate, and method of manufacturing photodetector
Jiangbo Chen, Beijing (CN); Fanli Meng, Beijing (CN); Fan Li, Beijing (CN); Shuo Zhang, Beijing (CN); Da Li, Beijing (CN); Zeyuan Li, Beijing (CN); and Yanzhao Li, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Mar. 17, 2021, as Appl. No. 17/204,057.
Claims priority of application No. 202010251313.X (CN), filed on Apr. 1, 2020.
Prior Publication US 2021/0313357 A1, Oct. 7, 2021
Int. Cl. H01L 27/144 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/1443 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/66969 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A photodetector, comprising a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode below the photosensitive layer and above the thin film transistor and connected to one of source/drain electrode of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor;
wherein the photodetector further comprises a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor;
wherein the photodetector further comprises a light-shielding pattern disposed between the thin film transistor and the sensing electrode and configured to block at least part of light irradiating the thin film transistor, wherein the hydrogen barrier layer is disposed above the light-shielding pattern and below the photosensitive layer.