CPC H01L 27/1255 (2013.01) [H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H10B 12/30 (2023.02)] | 8 Claims |
1. A semiconductor device comprising:
a first insulator;
a first conductor in an opening in the first insulator;
a first oxide over the first insulator;
a second conductor over the first oxide;
a second insulator over the second conductor;
a third conductor over the second conductor; and
a fourth conductor over the first oxide,
wherein the fourth conductor is provided in an opening in the second insulator, and
wherein the second conductor is in contact with a top surface of the first conductor and a bottom surface of the third conductor.
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