CPC H01L 27/1248 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01)] | 20 Claims |
1. A thin film transistor structure, comprising:
a dielectric layer formed on a substrate, wherein the dielectric layer comprises a first layer formed by silicon oxide doped zirconium oxide and a second layer formed by a crystalline zirconium containing material; and
gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes are formed above or below the dielectric layer.
|