US 11,894,396 B2
High-K dielectric materials comprising zirconium oxide utilized in display devices
Xiangxin Rui, Campbell, CA (US); Lai Zhao, Campbell, CA (US); Jrjyan Jerry Chen, Campbell, CA (US); Soo Young Choi, Fremont, CA (US); and Yujia Zhai, Fremont, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 7, 2022, as Appl. No. 17/647,404.
Application 17/647,404 is a continuation of application No. 15/773,640, granted, now 11,239,258, previously published as PCT/US2017/041555, filed on Jul. 11, 2017.
Claims priority of provisional application 62/364,139, filed on Jul. 19, 2016.
Claims priority of provisional application 62/364,145, filed on Jul. 19, 2016.
Prior Publication US 2022/0130873 A1, Apr. 28, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/1248 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A thin film transistor structure, comprising:
a dielectric layer formed on a substrate, wherein the dielectric layer comprises a first layer formed by silicon oxide doped zirconium oxide and a second layer formed by a crystalline zirconium containing material; and
gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes are formed above or below the dielectric layer.