CPC H01L 27/0922 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 23/5286 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a first transistor of a first conductivity type arranged in a first layer, the first transistor comprising:
a gate extending in a first direction; and
a first active region extending in a second direction perpendicular to the first direction;
a second transistor of a second conductivity type arranged in a second layer over the first layer, the second transistor comprising:
the gate; and
a second active region extending in the second direction; and
a first conductive line arranged in a third layer between the first layer and the second layer and extending in the second direction, the first conductive line electrically connecting a first source/drain region of the first active region to a second source/drain region of the second active region,
wherein the gate comprises an upper portion and a lower portion, and the first conductive line crosses the gate between the upper portion and the lower portion.
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