US 11,894,361 B2
Co-integrated logic, electrostatic discharge, and well contact devices on a substrate
Julien Frougier, Albany, NY (US); Sagarika Mukesh, Albany, NY (US); Anthony I. Chou, Guilderland, NY (US); Andrew M. Greene, Slingerlands, NY (US); Ruilong Xie, Niskayuna, NY (US); Veeraraghavan S. Basker, Schenectady, NY (US); Junli Wang, Slingerlands, NY (US); Effendi Leobandung, Stormville, NY (US); Jingyun Zhang, Albany, NY (US); and Nicolas Loubet, Guilderland, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 8, 2021, as Appl. No. 17/545,501.
Prior Publication US 2023/0178539 A1, Jun. 8, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01)
CPC H01L 27/0255 (2013.01) [H01L 21/823481 (2013.01); H01L 21/84 (2013.01); H01L 27/0296 (2013.01); H01L 27/1207 (2013.01); H01L 27/1211 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first field effect device on a first region of a substrate, wherein a gate structure and a first source/drain of the first field effect device are separated from the substrate by a bottom dielectric layer; and
an electrostatic discharge device on a second region of the substrate, wherein a gate structure for the electrostatic discharge device is separated from the substrate by the bottom dielectric layer, and a source/drain for the electrostatic discharge device is in electrical contact with the substrate, wherein the source/drain for the electrostatic discharge device is doped with a second dopant type.