US 11,894,360 B2
Semiconductor memory device having a channel plug
Jang Won Kim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Aug. 19, 2021, as Appl. No. 17/406,987.
Claims priority of application No. 10-2021-0048364 (KR), filed on Apr. 14, 2021.
Prior Publication US 2022/0336437 A1, Oct. 20, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 29/10 (2006.01); H10B 43/27 (2023.01)
CPC H01L 27/0207 (2013.01) [H01L 29/1037 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a slit pattern and a trench pattern disposed to extend substantially in parallel with each other in a first direction; and
channel plugs between the slit pattern and the trench pattern,
wherein:
the channel plugs comprise:
a first channel plug adjacent to the slit pattern,
a second channel plug between the first channel plug and the trench pattern;
a third channel plug between the second channel plug and the trench pattern;
a fourth channel plug between the third channel plug and the trench pattern; and
a fifth channel plug traversed by the trench pattern,
wherein:
a top surface shape of the first channel plug is an elliptical shape,
a top surface shape of each of the third channel plug and the fourth channel plug is substantially a circle shape,
a top surface shape of the fifth channel plug is substantially a separated circle shape separated by the trench pattern, and
a long axis direction of the first channel plug and the first direction form an acute angle.