CPC H01L 27/0207 (2013.01) [H01L 29/1037 (2013.01); H10B 43/27 (2023.02)] | 20 Claims |
1. A semiconductor device comprising:
a slit pattern and a trench pattern disposed to extend substantially in parallel with each other in a first direction; and
channel plugs between the slit pattern and the trench pattern,
wherein:
the channel plugs comprise:
a first channel plug adjacent to the slit pattern,
a second channel plug between the first channel plug and the trench pattern;
a third channel plug between the second channel plug and the trench pattern;
a fourth channel plug between the third channel plug and the trench pattern; and
a fifth channel plug traversed by the trench pattern,
wherein:
a top surface shape of the first channel plug is an elliptical shape,
a top surface shape of each of the third channel plug and the fourth channel plug is substantially a circle shape,
a top surface shape of the fifth channel plug is substantially a separated circle shape separated by the trench pattern, and
a long axis direction of the first channel plug and the first direction form an acute angle.
|