US 11,894,319 B2
Extended seal ring structure on wafer-stacking
Shih-Hsorng Shen, Hsinchu (TW); and Kuan-Hsien Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/150,871.
Claims priority of provisional application 63/058,623, filed on Jul. 30, 2020.
Prior Publication US 2022/0037268 A1, Feb. 3, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/78 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
bonding first connectors of a first wafer to second connectors of a second wafer, the first wafer comprising a first seal ring, the second wafer comprising a second seal ring;
forming a third seal ring surrounding the first connectors and the second connectors, the third seal ring spanning an interface between the first wafer and the second wafer, the third seal ring comprising a first seal ring extension extending from the first seal ring and a second seal ring extension extending from the second seal ring;
forming a trench through the second wafer, the trench penetrating the first wafer, the trench surrounding the first connectors and the second connectors;
filling the trench with a seal ring material to form a fourth seal ring; and
singulating the first wafer and the second wafer to singulate a first package therefrom.