CPC H01L 23/552 (2013.01) [H01L 21/56 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01Q 1/40 (2013.01)] | 25 Claims |
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over a surface of the substrate;
disposing an antenna interposer over the substrate; and
depositing a first encapsulant around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant in the range of 14 to 21.
|