US 11,894,312 B2
Semiconductor packages and method of manufacture
Wei-Yu Chen, Hsinchu (TW); Chun-Chih Chuang, Taichung (TW); Kuan-Lin Ho, Hsinchu (TW); Yu-Min Liang, Zhongli (TW); and Jiun Yi Wu, Zhongli (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/869,286.
Application 17/869,286 is a division of application No. 16/883,186, filed on May 26, 2020, granted, now 11,688,693.
Claims priority of provisional application 62/927,344, filed on Oct. 29, 2019.
Prior Publication US 2022/0359406 A1, Nov. 10, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/19106 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a seed layer over a carrier substrate;
forming a patterned dielectric layer over the seed layer, the patterned dielectric layer comprising a plurality of openings;
plating a first metallization pattern in the plurality of openings;
bonding an interconnect device to a first surface of the first metallization pattern, the interconnect device is free of any transistors;
bonding a passive device to the first surface of the first metallization pattern, the passive device is free of any active devices;
burying the interconnect device and the passive device in a dielectric film;
bonding a first device die to a second surface of the first metallization pattern, the second surface is opposite the first surface; and
bonding a second device die to the second surface of the first metallization pattern, wherein the interconnect device electrically routes signals between the first device die and the second device die.