US 11,894,308 B2
Semiconductor package and method of manufacturing the same
Sheng-Ming Wang, Kaohsiung (TW); Tien-Szu Chen, Kaohsiung (TW); Wen-Chih Shen, Kaohsiung (TW); Hsing-Wen Lee, Kaohsiung (TW); and Hsiang-Ming Feng, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Dec. 1, 2020, as Appl. No. 17/109,111.
Application 17/109,111 is a continuation of application No. 16/109,272, filed on Aug. 22, 2018, granted, now 10,854,550.
Claims priority of provisional application 62/564,939, filed on Sep. 28, 2017.
Prior Publication US 2021/0091006 A1, Mar. 25, 2021
Int. Cl. H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 23/66 (2006.01); H01L 23/367 (2006.01); H01P 3/06 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5386 (2013.01) [H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/3107 (2013.01); H01L 23/3677 (2013.01); H01L 23/5383 (2013.01); H01L 23/66 (2013.01); H01P 3/06 (2013.01); H01L 23/3128 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 25/0657 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2223/6622 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73253 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06558 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19103 (2013.01); H01L 2924/19105 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A substrate, comprising:
a dielectric layer
a first conductive via disposed in the dielectric layer, the first conductive via comprising a pattern exposed from the dielectric layer:
wherein the pattern comprises a first geometric center corresponding to a first geometric pattern, a second geometric center corresponding to a second geometric pattern, and a first distance between the first geometric center and the second geometric center is greater than a sum of a radius of the first geometric pattern and a radius of the second geometric pattern,
wherein the pattern further comprises a third geometric center corresponding to a third geometric pattern, a fourth geometric center corresponding to a fourth geometric pattern, and the third geometric pattern is connected to the first geometric pattern and the second geometric pattern, the fourth geometric pattern is connected to the first geometric pattern and the second geometric pattern,
wherein a second distance between the third geometric center and the fourth geometric center is greater than a sum of a radius of the third geometric pattern and a radius of the fourth geometric pattern, and
wherein a third distance between the third geometric center and the second geometric center is less than a fourth distance between the third geometric center and the first geometric center, and a first direction extending from the third geometric center to the second geometric center is substantially perpendicular to a second direction extending from the third geometric center to the first geometric center.