US 11,894,307 B2
Semiconductor device package
Sang Youl Lee, Seoul (KR); Ki Man Kang, Seoul (KR); and Eun Dk Lee, Seoul (KR)
Assigned to SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
Appl. No. 16/979,734
Filed by SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
PCT Filed Apr. 5, 2019, PCT No. PCT/KR2019/004032
§ 371(c)(1), (2) Date Sep. 10, 2020,
PCT Pub. No. WO2019/194618, PCT Pub. Date Oct. 10, 2019.
Claims priority of application No. 10-2018-0039893 (KR), filed on Apr. 5, 2018; and application No. 10-2018-0049083 (KR), filed on Apr. 27, 2018.
Prior Publication US 2021/0043577 A1, Feb. 11, 2021
Int. Cl. H01L 23/538 (2006.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01)
CPC H01L 23/5386 (2013.01) [H01L 25/075 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device package comprising:
a substrate;
a plurality of semiconductor structures disposed to be spaced apart from each other at a central portion of the substrate,
wherein the semiconductor structure is disposed on the substrate and includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,
the second conductivity-type semiconductor layer and the active layer are disposed between the first conductivity type semiconductor layer and the substrate, and
a length ratio of a maximum height of an outermost surface of the first conductivity-type semiconductor layer to a separation distance between the adjacent semiconductor structures is in a range of 1:3 to 1:60;
an intermediate layer disposed on the outermost surface of the first conductivity-type semiconductor layer,
wherein the intermediate layer overlaps the outermost surface of the first conductivity-type semiconductor layer in a direction perpendicular to a thickness direction thereof, and
the intermediate layer includes a plurality of layers and is made of any one selected from among metal, ceramic, and semiconductor materials.