US 11,894,292 B2
Power module
Qing Yang, Shenzhen (CN); Yong Liu, Cumberland Foreside, ME (US); and Yushuang Yao, Shenzhen (CN)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Mar. 17, 2022, as Appl. No. 17/655,216.
Application 17/655,216 is a continuation of application No. 16/949,262, filed on Oct. 22, 2020, granted, now 11,315,859.
Prior Publication US 2022/0208666 A1, Jun. 30, 2022
Int. Cl. H01L 23/498 (2006.01); H01L 23/32 (2006.01); H01L 25/07 (2006.01); H01L 21/48 (2006.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/49811 (2013.01) [H01L 21/4817 (2013.01); H01L 21/4853 (2013.01); H01L 23/32 (2013.01); H01L 23/562 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 23/3735 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power module, comprising:
pins of a first material coupled at a bottom portion to top metal layer of a direct bonded copper (DBC) substrate and having a top portion extending through pin holes in a casing of the power module, the top portion of the pins configured to be press fit into vias of an electronic substrate; and
support pillars, of a second material, coupled at a first end to the electronic substrate and coupled at a second end to a baseplate onto which a bottom metal layer of the DBC substrate is coupled, the support pillars configured to hold the electronic substrate at a height relative to the pins, the second material of the support pillars having a coefficient of thermal expansion substantially the same as a coefficient of thermal expansion of the first material of the pins.