US 11,894,270 B2
Grating replication using helmets and topographically-selective deposition
Kevin Lin, Beaverton, OR (US); Sudipto Naskar, Portland, OR (US); Manish Chandhok, Beaverton, OR (US); Miriam Reshotko, Portland, OR (US); and Rami Hourani, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Apr. 13, 2022, as Appl. No. 17/720,152.
Application 17/720,152 is a division of application No. 16/024,692, filed on Jun. 29, 2018, granted, now 11,335,598.
Prior Publication US 2022/0238376 A1, Jul. 28, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 21/033 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 21/0228 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76834 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of forming an interconnect structure, comprising:
disposing a first interconnect layer in a first interlayer dielectric (ILD), wherein the first interconnect layer comprises a plurality of conductive traces;
recessing an uppermost surface of the first ILD, wherein the recessed uppermost surface of the first ILD is below uppermost surfaces of the first conductive traces;
disposing an etch stop layer over the first ILD and the first conductive traces;
selectively depositing a helmet layer over the first conductive traces, wherein the helmet layer is deposited with an atomic layer deposition (ALD) processes that comprises spinning a substrate on which the interconnect structure is formed;
disposing a second ILD over the interconnect structure, wherein the second ILD fills gaps between portions of the helmet layer on corresponding ones of the first conductive traces;
disposing a first hardmask layer over the second ILD;
removing the helmet layer; and
disposing a third ILD in the gaps between the second ILD.