CPC H01L 21/7685 (2013.01) [H01L 21/02118 (2013.01); H01L 21/28568 (2013.01); H01L 21/76828 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 23/53266 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a dielectric layer over a substrate;
forming a metal layer embedded within the dielectric layer;
selectively depositing a capping layer on the metal layer without depositing on the dielectric layer;
forming a self-assembled monolayer (SAM) over the capping layer, the SAM having a first portion and a second portion materially different from the first portion; and
removing the second portion of the SAM while the first portion of the SAM remains on the capping layer.
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