US 11,894,260 B2
Replacement material for backside gate cut feature
Wang-Chun Huang, Hsinchu (TW); Yu-Xuan Huang, Hsinchu (TW); Hou-Yu Chen, Hsinchu (TW); Kuan-Lun Cheng, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/818,601.
Application 17/818,601 is a division of application No. 17/186,839, filed on Feb. 26, 2021, granted, now 11,610,805.
Prior Publication US 2022/0384250 A1, Dec. 1, 2022
Int. Cl. H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 21/764 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/764 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a substrate;
a gate structure over the substrate; and
a cut feature between two separate portions of the gate structure and in direct contact with both the two separate portions of the gate structure,
wherein the cut feature comprises a dielectric layer and a work-function layer between the dielectric layer and the two separate portions of the gate structure, and
wherein the work-function layer directly contacts the dielectric layer and is spaced apart from a channel region surrounded by the gate structure.